ã Diodes Incorporated. 1N SCHOTTKY BARRIER SWITCHING DIODE. Features. ·. Low Forward Voltage Drop. ·. Guard Ring Construction for Transient. 1N and 1N Vishay Semiconductors formerly General Semiconductor. Document Number 8-May 1. Schottky Diodes. 1N datasheet, 1N pdf, 1N data sheet, datasheet, data sheet, pdf, BKC International Electronics, 60 V, mW silicon schottky barrier diode.

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Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. Communications Equipment, Computers and Peripherals. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,bi. Menu Products Explore our product portfolio. Computers and Peripherals Data Center. The low forward 1n663 drop and fast switching make it ideal for protection of MOS devices, steering.

Distributor Name Region Stock Min. Selectors Simulators and Models. No availability reported, please contact our Sales office. The low forward voltage drop datassheet fast switching make it ideal for protection of MOS devices,steering,biasing and coupling diodes for fast switching and.

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Not Recommended for New Design. Features For datqsheet purpose applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, b.

Small Signal Schottky Diodes Features For general purpose applications Metal silicon schottky barrier device which is protected by a PN junction guard ring.

No commitment taken to design or produce NRND: ST Code of Conduct Blog. Support Center Video Center. General terms and conditions. For general purpose applications.

Support Center Complete list and gateway to support services and resource pools. Metal-on-silicon schottky barrier device which is protected by a PN junction guard ring. Getting started with eDesignSuite. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast swi. Product is in volume production Evaluation: Product is in volume production only to support customers ongoing production.

Please contact our sales support for information on specific devices. For general purpose applications 2. Product is in design stage Target: The low forward voltage drop and fast switching make i t ideal for protection of MOS devices, steering, biasing and coupling. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling. The low forward voltage drop and fast switching make it ideal for protection of MO.

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1N – 60 V, 15 mA axial RF and Ultrafast Switching Signal Schottky Diode – STMicroelectronics

Product is in design feasibility stage. IoT for Smart Things. Marketing proposal for customer feedback. Who We Are Management. No commitment taken to produce Proposal: The low forward voltage drop and fast switching make it ideal for protection o. Media Subscription Datashet Contacts. Tools and Software Development Tools. Product is in volume production 0.

(PDF) 1N6263 Datasheet download

Product is in volume production. Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching. Limited Engineering samples available Preview: Getting started with eDesignSuite 5: Product is under characterization. Free Sample Add to cart. Tj max limit of Schottky diodes.